Processing-Structure-Protrusion Relationship of 3-D Cu TSVs: Control at the Atomic Scale

Processing-Structure-Protrusion Relationship of 3-D Cu TSVs: Control at the Atomic Scale

A phase-field-crystal model is used to investigate the processing-structure-protrusion relationship of blind Cu through-silicon vias (TSVs) at the atomic scale. A higher temperature results in a larger TSV protrusion. Deformation via dislocation motion dominates at temperatures lower than around 300...

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Bibliographic Details
Main Authors: Jinxin Liu, Zhiheng Huang, Paul P. Conway, Yang Liu
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Copper
interconnections
reliability modeling
through-silicon via
microstructure
Online Access:https://ieeexplore.ieee.org/document/8869888/

Internet

https://ieeexplore.ieee.org/document/8869888/

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