Performance Analysis of Custom Dual-Finger 250 nm InP HBT Devices for Implementation of 255 GHz Amplifiers
The performances of WR-3.4 monolithic amplifiers fabricated using dual-finger 6 µm InP HBT devices are investigated. While one amplifier uses the dual-finger devices formed by simply connecting two existing standard single-finger HBTs, the second amplifier uses newly formed devices that share a comm...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-08-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/11/16/2614 |