Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application

Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application

High density phase change memory array requires both minimized critical dimension (CD) and maximized process window for the phase change material layer. High in-wafer uniformity of the nanoscale patterning of chalcogenides material is challenging given the optical proximity effect (OPE) in the litho...

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Bibliographic Details
Main Authors: Jiarui Zhang, Wencheng Fang, Ruobing Wang, Chengxing Li, Jia Zheng, Xixi Zou, Sannian Song, Zhitang Song, Xilin Zhou
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Nanomaterials
Subjects:
phase change memory
storage class memory
SRAF
optical proximity effect
micro-loading effect
Online Access:https://www.mdpi.com/2079-4991/13/6/1050

Internet

https://www.mdpi.com/2079-4991/13/6/1050

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