Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques
GaN and its alloys with InN and AlN are of technological importance for a variety of optical, electronic, and optoelectronic devices due to its high thermal conductivity, wide band gap, high breakdown voltage and high saturation velocity. GaN-based devices now provide superior performance for a vari...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-09-01
|
| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/12/9/1294 |