Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques
GaN and its alloys with InN and AlN are of technological importance for a variety of optical, electronic, and optoelectronic devices due to its high thermal conductivity, wide band gap, high breakdown voltage and high saturation velocity. GaN-based devices now provide superior performance for a vari...
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| Format: | Article |
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MDPI AG
2022-09-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/12/9/1294 |
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| author | Jaime A. Freitas James C. Culbertson Evan R. Glaser |
| author_facet | Jaime A. Freitas James C. Culbertson Evan R. Glaser |
| author_sort | Jaime A. Freitas |
| collection | DOAJ |
| description | GaN and its alloys with InN and AlN are of technological importance for a variety of optical, electronic, and optoelectronic devices due to its high thermal conductivity, wide band gap, high breakdown voltage and high saturation velocity. GaN-based devices now provide superior performance for a variety of high power, high frequency, high temperature, and optical applications. The major roadblock for the full realization of Nitride semiconductor potential is still the availability of affordable large-area and high-quality native substrates with controlled electrical properties. Despite the impressive accomplishments recently achieved by techniques such as hydride vapor phase epitaxy and ammonothermal for GaN growth, much more must be attained before establishing a fully satisfactory bulk growth method for this material. Recent results suggest that ammonothermal GaN wafers can be successfully used as seeds to grow thick freestanding GaN wafers by hydride vapor phase epitaxy. A brief review of defect-sensitive optical and paramagnetic spectroscopy techniques employed to evaluate structural, optical, and electronic properties of the state-of-the-art bulk and thick-film (quasi-bulk) Nitride substrates and homoepitaxial films is presented. Defects control the performance of devices and feeding back knowledge of defects to growth efforts is key to advancing technology. |
| first_indexed | 2024-03-10T00:20:21Z |
| format | Article |
| id | doaj.art-ea829b5a22ea41b6b5c352b3c6957c00 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-10T00:20:21Z |
| publishDate | 2022-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-ea829b5a22ea41b6b5c352b3c6957c002023-11-23T15:44:43ZengMDPI AGCrystals2073-43522022-09-01129129410.3390/cryst12091294Characterization of Defects in GaN: Optical and Magnetic Resonance TechniquesJaime A. Freitas0James C. Culbertson1Evan R. Glaser2Naval Research Laboratory, Washington, DC 20375, USANaval Research Laboratory, Washington, DC 20375, USANaval Research Laboratory, Washington, DC 20375, USAGaN and its alloys with InN and AlN are of technological importance for a variety of optical, electronic, and optoelectronic devices due to its high thermal conductivity, wide band gap, high breakdown voltage and high saturation velocity. GaN-based devices now provide superior performance for a variety of high power, high frequency, high temperature, and optical applications. The major roadblock for the full realization of Nitride semiconductor potential is still the availability of affordable large-area and high-quality native substrates with controlled electrical properties. Despite the impressive accomplishments recently achieved by techniques such as hydride vapor phase epitaxy and ammonothermal for GaN growth, much more must be attained before establishing a fully satisfactory bulk growth method for this material. Recent results suggest that ammonothermal GaN wafers can be successfully used as seeds to grow thick freestanding GaN wafers by hydride vapor phase epitaxy. A brief review of defect-sensitive optical and paramagnetic spectroscopy techniques employed to evaluate structural, optical, and electronic properties of the state-of-the-art bulk and thick-film (quasi-bulk) Nitride substrates and homoepitaxial films is presented. Defects control the performance of devices and feeding back knowledge of defects to growth efforts is key to advancing technology.https://www.mdpi.com/2073-4352/12/9/1294GaNHVPEammonothermalepitaxialRaman scatteringphotoluminescence |
| spellingShingle | Jaime A. Freitas James C. Culbertson Evan R. Glaser Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques Crystals GaN HVPE ammonothermal epitaxial Raman scattering photoluminescence |
| title | Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques |
| title_full | Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques |
| title_fullStr | Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques |
| title_full_unstemmed | Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques |
| title_short | Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques |
| title_sort | characterization of defects in gan optical and magnetic resonance techniques |
| topic | GaN HVPE ammonothermal epitaxial Raman scattering photoluminescence |
| url | https://www.mdpi.com/2073-4352/12/9/1294 |
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