Electron–phonon effects and temperature-dependence of the electronic structure of monoclinic β-Ga2O3
Gallium oxide (Ga2O3) is a promising semiconductor for next-generation high-power electronics due to its ultra-wide bandgap and high critical breakdown field. To utilize its unique electrical properties for real-world applications, an accurate description of its electronic structure under device-ope...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-01-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0131453 |