In‐plane ferroelectrics enabling reduced hysteresis in monolayer MoS2 transistors

Abstract Two‐dimensional (2D) semiconductors, such as monolayer MoS2, has emerged as a profound material platform in the post‐Moore era due to their versatile applications for high‐performance transistors, memories, photodetectors, neuristors, and so on. Nevertheless, the inherent defects in these a...

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Bibliographic Details
Main Authors: Mingxuan Yuan, Binbin Zhang, Jiliang Cai, Jiaqi Zhang, Yue Lu, Shuo Qiao, Kecheng Cao, Hao Deng, Qingqing Ji
Format: Article
Language:English
Published: Wiley 2024-07-01
Series:Carbon Neutralization
Subjects:
Online Access:https://doi.org/10.1002/cnl2.148