Dark exciton anti-funneling in atomically thin semiconductors

Dark exciton anti-funneling in atomically thin semiconductors

Strain engineering can manipulate the propagation of excitons in atomically thin transition metal dichalcogenides. Here, the authors observe an anti-funnelling behavior, i.e., the exciton photoluminescence moves away from high-strain regions, and attribute it to the dominating role of propagating da...

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Bibliographic Details
Main Authors: Roberto Rosati, Robert Schmidt, Samuel Brem, Raül Perea-Causín, Iris Niehues, Johannes Kern, Johann A. Preuß, Robert Schneider, Steffen Michaelis de Vasconcellos, Rudolf Bratschitsch, Ermin Malic
Format: Article
Language:English
Published: Nature Portfolio 2021-12-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-021-27425-y

Internet

https://doi.org/10.1038/s41467-021-27425-y

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