Dark exciton anti-funneling in atomically thin semiconductors
Strain engineering can manipulate the propagation of excitons in atomically thin transition metal dichalcogenides. Here, the authors observe an anti-funnelling behavior, i.e., the exciton photoluminescence moves away from high-strain regions, and attribute it to the dominating role of propagating da...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2021-12-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-021-27425-y |
| _version_ | 1818458775517921280 |
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| author | Roberto Rosati Robert Schmidt Samuel Brem Raül Perea-Causín Iris Niehues Johannes Kern Johann A. Preuß Robert Schneider Steffen Michaelis de Vasconcellos Rudolf Bratschitsch Ermin Malic |
| author_facet | Roberto Rosati Robert Schmidt Samuel Brem Raül Perea-Causín Iris Niehues Johannes Kern Johann A. Preuß Robert Schneider Steffen Michaelis de Vasconcellos Rudolf Bratschitsch Ermin Malic |
| author_sort | Roberto Rosati |
| collection | DOAJ |
| description | Strain engineering can manipulate the propagation of excitons in atomically thin transition metal dichalcogenides. Here, the authors observe an anti-funnelling behavior, i.e., the exciton photoluminescence moves away from high-strain regions, and attribute it to the dominating role of propagating dark excitons. |
| first_indexed | 2024-12-14T23:03:49Z |
| format | Article |
| id | doaj.art-eabf99488ae442e797a4cdf050df2b44 |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-12-14T23:03:49Z |
| publishDate | 2021-12-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-eabf99488ae442e797a4cdf050df2b442022-12-21T22:44:24ZengNature PortfolioNature Communications2041-17232021-12-011211710.1038/s41467-021-27425-yDark exciton anti-funneling in atomically thin semiconductorsRoberto Rosati0Robert Schmidt1Samuel Brem2Raül Perea-Causín3Iris Niehues4Johannes Kern5Johann A. Preuß6Robert Schneider7Steffen Michaelis de Vasconcellos8Rudolf Bratschitsch9Ermin Malic10Department of Physics, Philipps-Universität MarburgInstitute of Physics and Center for Nanotechnology, University of MünsterDepartment of Physics, Philipps-Universität MarburgChalmers University of Technology, Department of PhysicsInstitute of Physics and Center for Nanotechnology, University of MünsterInstitute of Physics and Center for Nanotechnology, University of MünsterInstitute of Physics and Center for Nanotechnology, University of MünsterInstitute of Physics and Center for Nanotechnology, University of MünsterInstitute of Physics and Center for Nanotechnology, University of MünsterInstitute of Physics and Center for Nanotechnology, University of MünsterDepartment of Physics, Philipps-Universität MarburgStrain engineering can manipulate the propagation of excitons in atomically thin transition metal dichalcogenides. Here, the authors observe an anti-funnelling behavior, i.e., the exciton photoluminescence moves away from high-strain regions, and attribute it to the dominating role of propagating dark excitons.https://doi.org/10.1038/s41467-021-27425-y |
| spellingShingle | Roberto Rosati Robert Schmidt Samuel Brem Raül Perea-Causín Iris Niehues Johannes Kern Johann A. Preuß Robert Schneider Steffen Michaelis de Vasconcellos Rudolf Bratschitsch Ermin Malic Dark exciton anti-funneling in atomically thin semiconductors Nature Communications |
| title | Dark exciton anti-funneling in atomically thin semiconductors |
| title_full | Dark exciton anti-funneling in atomically thin semiconductors |
| title_fullStr | Dark exciton anti-funneling in atomically thin semiconductors |
| title_full_unstemmed | Dark exciton anti-funneling in atomically thin semiconductors |
| title_short | Dark exciton anti-funneling in atomically thin semiconductors |
| title_sort | dark exciton anti funneling in atomically thin semiconductors |
| url | https://doi.org/10.1038/s41467-021-27425-y |
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