Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors

Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors

We present a biosensor chip with integrated large area silicon nanowire-based field effect transistors (FET) for human α-thrombin detection and propose to implement the hysteresis width of the FET transfer curve as a reliable parameter to quantify the concentration of biomolecules in the s...

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Bibliographic Details
Main Authors: Bergoi Ibarlucea, Lotta Römhildt, Felix Zörgiebel, Sebastian Pregl, Maryam Vahdatzadeh, Walter M. Weber, Thomas Mikolajick, Jörg Opitz, Larysa Baraban, Gianaurelio Cuniberti
Format: Article
Language:English
Published: MDPI AG 2018-06-01
Series:Applied Sciences
Subjects:
silicon nanowires
field effect transistor
nanosensors
sub-threshold regime
transfer characteristics
hysteresis
aptamers
human α-thrombin
Online Access:http://www.mdpi.com/2076-3417/8/6/950

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http://www.mdpi.com/2076-3417/8/6/950

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