High Temperature Reverse Bias (HTRB) & Temperature Humidity Bias (THB) Reliability Failure Mechanisms and Improvements in Trench Power MOSFET and IGBT
High Temperature Reverse Bias (HTRB) reliability failure is found to be caused by huge amount of undesirable hydrogen proton (H<sup>+</sup>) ions from packaging resin or external environment, while Temperature Humidity Bias (THB) reliability failure is known to be caused by mo...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9526865/ |