Sensitivity of Inner Spacer Thickness Variations for Sub-3-nm Node Silicon Nanosheet Field-Effect Transistors

Sensitivity of Inner Spacer Thickness Variations for Sub-3-nm Node Silicon Nanosheet Field-Effect Transistors

The inner spacer thickness (T<sub>IS</sub>) variations in sub-3-nm, node 3-stacked, nanosheet field-effect transistors (NSFETs) were investigated using computer-aided design simulation technology. Inner spacer formation requires a high selectivity of SiGe to Si, which causes inevitable T...

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Bibliographic Details
Main Authors: Sanguk Lee, Jinsu Jeong, Jun-Sik Yoon, Seunghwan Lee, Junjong Lee, Jaewan Lim, Rock-Hyun Baek
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Nanomaterials
Subjects:
nanosheet FET
inner spacer
inner spacer thickness variation
performance sensitivity
source/drain recess depth
TCAD simulation
Online Access:https://www.mdpi.com/2079-4991/12/19/3349

Internet

https://www.mdpi.com/2079-4991/12/19/3349

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