Characterizing Ferroelectric Properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> From Deep-Cryogenic Temperature (4 K) to 400 K

Characterizing Ferroelectric Properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> From Deep-Cryogenic Temperature (4 K) to 400 K

Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) thin film has obtained considerable attention for emerging non-volatile memory (eNVM) and synaptic device applications. To our best knowledge, the polarization switching of HZO has not been comprehe...

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Bibliographic Details
Main Authors: Jae Hur, Yuan-Chun Luo, Zheng Wang, Sarah Lombardo, Asif Islam Khan, Shimeng Yu
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Subjects:
Cryogenic temperature
device reliability
ferroelectric
ferroelectric field-effect transistor (FeFET)
ferroelectric random access memory (FeRAM)
Hf0.5Zr0.5O2 (HZO)
Online Access:https://ieeexplore.ieee.org/document/9627158/

Internet

https://ieeexplore.ieee.org/document/9627158/

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