TCAD Analysis of the Four-Terminal Poly-Si TFTs on Suppression Mechanisms of the DC and AC Hot-Carrier Degradation

TCAD Analysis of the Four-Terminal Poly-Si TFTs on Suppression Mechanisms of the DC and AC Hot-Carrier Degradation

Four-terminal poly-Si thin-film transistors (TFTs), with a counter-doped body terminal connected to the floating channel, can suppress both dc and dynamic hot-carrier (HC) degradation of TFTs. With 3-D TCAD simulation, we clarify the underlying mechanisms of the suppression effect and analyze its de...

Full description

Bibliographic Details
Main Authors: Ting Gao, Mingxiang Wang, Huaisheng Wang, Dongli Zhang
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Poly-Si thin-film transistors
body terminal
kink effect
dynamic hot-carrier (HC) degradation
Online Access:https://ieeexplore.ieee.org/document/8714035/

Internet

https://ieeexplore.ieee.org/document/8714035/

Similar Items