Shunt current in InAs diffused photodiodes
The shunt current has been investigated in p+-n type InAs diffused photodiodes. The mesastructures were prepared by etching in Br2-HBr solution and sequentially etched in CP-4 and in a lactic acid based etchants. The surface of mesastructures was passivated in alcohol solution of Na2S. After each ch...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2020-06-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Subjects: | |
| Online Access: | http://journal-spqeo.org.ua/n2_2020/P208-213abstr.html |