Shunt current in InAs diffused photodiodes

Shunt current in InAs diffused photodiodes

The shunt current has been investigated in p+-n type InAs diffused photodiodes. The mesastructures were prepared by etching in Br2-HBr solution and sequentially etched in CP-4 and in a lactic acid based etchants. The surface of mesastructures was passivated in alcohol solution of Na2S. After each ch...

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Bibliographic Details
Main Authors: A.V. Sukach, V.V. Tetyorkin, А.І. Тkachuk
Format: Article
Language:English
Published: National Academy of Sciences of Ukraine. Institute of Semi conductor physics. 2020-06-01
Series:Semiconductor Physics, Quantum Electronics & Optoelectronics
Subjects:
inas
shunt current
inversion surface layer
Online Access:http://journal-spqeo.org.ua/n2_2020/P208-213abstr.html

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