Preservation of pristine Bi2Te3 thin film topological insulator surface after ex situ mechanical removal of Te capping layer
Ex situ analyses on topological insulator films require protection against surface contamination during air exposure. This work reports on a technique that combines deposition of protective capping just after epitaxial growth and its mechanical removal inside ultra-high vacuum systems. This method w...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-10-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4964610 |