Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors
This study investigates the design and fabrication of magnetic microsensors using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process. The magnetic sensor is composed of springs and interdigitated electrodes, and it is actuated by the Lorentz force. The finite element metho...
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MDPI AG
2013-10-01
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Series: | Sensors |
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Online Access: | http://www.mdpi.com/1424-8220/13/11/14728 |
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author | Ming-Zhi Yang Ching-Liang Dai Chen-Hsuan Hsieh |
author_facet | Ming-Zhi Yang Ching-Liang Dai Chen-Hsuan Hsieh |
author_sort | Ming-Zhi Yang |
collection | DOAJ |
description | This study investigates the design and fabrication of magnetic microsensors using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process. The magnetic sensor is composed of springs and interdigitated electrodes, and it is actuated by the Lorentz force. The finite element method (FEM) software CoventorWare is adopted to simulate the displacement and capacitance of the magnetic sensor. A post-CMOS process is utilized to release the suspended structure. The post-process uses an anisotropic dry etching to etch the silicon dioxide layer and an isotropic dry etching to remove the silicon substrate. When a magnetic field is applied to the magnetic sensor, it generates a change in capacitance. A sensing circuit is employed to convert the capacitance variation of the sensor into the output voltage. The experimental results show that the output voltage of the magnetic microsensor varies from 0.05 to 1.94 V in the magnetic field range of 5–200 mT. |
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id | doaj.art-eb6192c1f36d4b58af9de21fed3d1c19 |
institution | Directory Open Access Journal |
issn | 1424-8220 |
language | English |
last_indexed | 2024-04-13T07:02:43Z |
publishDate | 2013-10-01 |
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series | Sensors |
spelling | doaj.art-eb6192c1f36d4b58af9de21fed3d1c192022-12-22T02:57:04ZengMDPI AGSensors1424-82202013-10-011311147281473910.3390/s131114728Fabrication and Characterization of CMOS-MEMS Magnetic MicrosensorsMing-Zhi YangChing-Liang DaiChen-Hsuan HsiehThis study investigates the design and fabrication of magnetic microsensors using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process. The magnetic sensor is composed of springs and interdigitated electrodes, and it is actuated by the Lorentz force. The finite element method (FEM) software CoventorWare is adopted to simulate the displacement and capacitance of the magnetic sensor. A post-CMOS process is utilized to release the suspended structure. The post-process uses an anisotropic dry etching to etch the silicon dioxide layer and an isotropic dry etching to remove the silicon substrate. When a magnetic field is applied to the magnetic sensor, it generates a change in capacitance. A sensing circuit is employed to convert the capacitance variation of the sensor into the output voltage. The experimental results show that the output voltage of the magnetic microsensor varies from 0.05 to 1.94 V in the magnetic field range of 5–200 mT.http://www.mdpi.com/1424-8220/13/11/14728magnetic sensorLorentz forceCMOSpost-process |
spellingShingle | Ming-Zhi Yang Ching-Liang Dai Chen-Hsuan Hsieh Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors Sensors magnetic sensor Lorentz force CMOS post-process |
title | Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors |
title_full | Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors |
title_fullStr | Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors |
title_full_unstemmed | Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors |
title_short | Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors |
title_sort | fabrication and characterization of cmos mems magnetic microsensors |
topic | magnetic sensor Lorentz force CMOS post-process |
url | http://www.mdpi.com/1424-8220/13/11/14728 |
work_keys_str_mv | AT mingzhiyang fabricationandcharacterizationofcmosmemsmagneticmicrosensors AT chingliangdai fabricationandcharacterizationofcmosmemsmagneticmicrosensors AT chenhsuanhsieh fabricationandcharacterizationofcmosmemsmagneticmicrosensors |