Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors

This study investigates the design and fabrication of magnetic microsensors using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process. The magnetic sensor is composed of springs and interdigitated electrodes, and it is actuated by the Lorentz force. The finite element metho...

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Main Authors: Ming-Zhi Yang, Ching-Liang Dai, Chen-Hsuan Hsieh
Format: Article
Language:English
Published: MDPI AG 2013-10-01
Series:Sensors
Subjects:
Online Access:http://www.mdpi.com/1424-8220/13/11/14728
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author Ming-Zhi Yang
Ching-Liang Dai
Chen-Hsuan Hsieh
author_facet Ming-Zhi Yang
Ching-Liang Dai
Chen-Hsuan Hsieh
author_sort Ming-Zhi Yang
collection DOAJ
description This study investigates the design and fabrication of magnetic microsensors using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process. The magnetic sensor is composed of springs and interdigitated electrodes, and it is actuated by the Lorentz force. The finite element method (FEM) software CoventorWare is adopted to simulate the displacement and capacitance of the magnetic sensor. A post-CMOS process is utilized to release the suspended structure. The post-process uses an anisotropic dry etching to etch the silicon dioxide layer and an isotropic dry etching to remove the silicon substrate. When a magnetic field is applied to the magnetic sensor, it generates a change in capacitance. A sensing circuit is employed to convert the capacitance variation of the sensor into the output voltage. The experimental results show that the output voltage of the magnetic microsensor varies from 0.05 to 1.94 V in the magnetic field range of 5–200 mT.
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spelling doaj.art-eb6192c1f36d4b58af9de21fed3d1c192022-12-22T02:57:04ZengMDPI AGSensors1424-82202013-10-011311147281473910.3390/s131114728Fabrication and Characterization of CMOS-MEMS Magnetic MicrosensorsMing-Zhi YangChing-Liang DaiChen-Hsuan HsiehThis study investigates the design and fabrication of magnetic microsensors using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process. The magnetic sensor is composed of springs and interdigitated electrodes, and it is actuated by the Lorentz force. The finite element method (FEM) software CoventorWare is adopted to simulate the displacement and capacitance of the magnetic sensor. A post-CMOS process is utilized to release the suspended structure. The post-process uses an anisotropic dry etching to etch the silicon dioxide layer and an isotropic dry etching to remove the silicon substrate. When a magnetic field is applied to the magnetic sensor, it generates a change in capacitance. A sensing circuit is employed to convert the capacitance variation of the sensor into the output voltage. The experimental results show that the output voltage of the magnetic microsensor varies from 0.05 to 1.94 V in the magnetic field range of 5–200 mT.http://www.mdpi.com/1424-8220/13/11/14728magnetic sensorLorentz forceCMOSpost-process
spellingShingle Ming-Zhi Yang
Ching-Liang Dai
Chen-Hsuan Hsieh
Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors
Sensors
magnetic sensor
Lorentz force
CMOS
post-process
title Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors
title_full Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors
title_fullStr Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors
title_full_unstemmed Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors
title_short Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors
title_sort fabrication and characterization of cmos mems magnetic microsensors
topic magnetic sensor
Lorentz force
CMOS
post-process
url http://www.mdpi.com/1424-8220/13/11/14728
work_keys_str_mv AT mingzhiyang fabricationandcharacterizationofcmosmemsmagneticmicrosensors
AT chingliangdai fabricationandcharacterizationofcmosmemsmagneticmicrosensors
AT chenhsuanhsieh fabricationandcharacterizationofcmosmemsmagneticmicrosensors