Transition from rectification to resistive-switching in Ti/MgF2/Pt memory
Magnesium fluoride is a promising candidate for resistive-switching random access memory (RRAM) with biodegradable property. However, the underlying resistive-switching (RS) mechanism and conduction mechanism in MgF2 material is still not fully studied, which limits the further performance optimizat...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5125153 |