Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET
Abstract Tunneling field-effect transistors (TFETs) are a promising candidate for the next generation of low-power devices, but their performance is very sensitive to traps near the tunneling junction. This study investigated the effects of high-pressure deuterium (D2) annealing and hydrogen (H2) an...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2022-11-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-022-22575-5 |