Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure

Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure

A method of combining the AlGaN/GaN superlattices and Mg delta doping was proposed to achieve a high conductivity p-type GaN layer. The experimental results provided the evidence that the novel doping technique achieves superior p-conductivity. The Hall-effect measurement indicated that the hole con...

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Bibliographic Details
Main Authors: Ying Zhao, Shengrui Xu, Hongchang Tao, Yachao Zhang, Chunfu Zhang, Lansheng Feng, Ruoshi Peng, Xiaomeng Fan, Jinjuan Du, Jincheng Zhang, Yue Hao
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Materials
Subjects:
GaN
p-conductivity
superlattice
delta doping
LED
Online Access:https://www.mdpi.com/1996-1944/14/1/144

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https://www.mdpi.com/1996-1944/14/1/144

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