Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure
A method of combining the AlGaN/GaN superlattices and Mg delta doping was proposed to achieve a high conductivity p-type GaN layer. The experimental results provided the evidence that the novel doping technique achieves superior p-conductivity. The Hall-effect measurement indicated that the hole con...
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MDPI AG
2020-12-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/14/1/144 |
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| author | Ying Zhao Shengrui Xu Hongchang Tao Yachao Zhang Chunfu Zhang Lansheng Feng Ruoshi Peng Xiaomeng Fan Jinjuan Du Jincheng Zhang Yue Hao |
| author_facet | Ying Zhao Shengrui Xu Hongchang Tao Yachao Zhang Chunfu Zhang Lansheng Feng Ruoshi Peng Xiaomeng Fan Jinjuan Du Jincheng Zhang Yue Hao |
| author_sort | Ying Zhao |
| collection | DOAJ |
| description | A method of combining the AlGaN/GaN superlattices and Mg delta doping was proposed to achieve a high conductivity p-type GaN layer. The experimental results provided the evidence that the novel doping technique achieves superior p-conductivity. The Hall-effect measurement indicated that the hole concentration was increased by 2.06 times while the sheet resistivity was reduced by 48%. The fabricated green-yellow light-emitting diodes using the achieved high conductivity p-type GaN layer showed an 8- and 10-times enhancement of light output power and external quantum efficiency, respectively. The subsequent numerical calculation was conducted by using an Advanced Physical Model of Semiconductor Device to reveal the mechanism of enhanced device performance. This new doping technique offers an attractive solution to the p-type doping problems in wide-bandgap GaN or AlGaN materials. |
| first_indexed | 2024-03-10T13:37:17Z |
| format | Article |
| id | doaj.art-ebd4be9123de4d5d9e2ad0e46d49a0c1 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T13:37:17Z |
| publishDate | 2020-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-ebd4be9123de4d5d9e2ad0e46d49a0c12023-11-21T07:26:29ZengMDPI AGMaterials1996-19442020-12-0114114410.3390/ma14010144Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice StructureYing Zhao0Shengrui Xu1Hongchang Tao2Yachao Zhang3Chunfu Zhang4Lansheng Feng5Ruoshi Peng6Xiaomeng Fan7Jinjuan Du8Jincheng Zhang9Yue Hao10Wide Band-Gap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, ChinaWide Band-Gap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, ChinaWide Band-Gap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, ChinaWide Band-Gap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, ChinaWide Band-Gap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, ChinaSchool of Mechanical-Electrical Engineering, Xi’dian University, Xi’an 710071, ChinaWide Band-Gap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, ChinaWide Band-Gap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, ChinaWide Band-Gap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, ChinaWide Band-Gap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, ChinaWide Band-Gap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, ChinaA method of combining the AlGaN/GaN superlattices and Mg delta doping was proposed to achieve a high conductivity p-type GaN layer. The experimental results provided the evidence that the novel doping technique achieves superior p-conductivity. The Hall-effect measurement indicated that the hole concentration was increased by 2.06 times while the sheet resistivity was reduced by 48%. The fabricated green-yellow light-emitting diodes using the achieved high conductivity p-type GaN layer showed an 8- and 10-times enhancement of light output power and external quantum efficiency, respectively. The subsequent numerical calculation was conducted by using an Advanced Physical Model of Semiconductor Device to reveal the mechanism of enhanced device performance. This new doping technique offers an attractive solution to the p-type doping problems in wide-bandgap GaN or AlGaN materials.https://www.mdpi.com/1996-1944/14/1/144GaNp-conductivitysuperlatticedelta dopingLED |
| spellingShingle | Ying Zhao Shengrui Xu Hongchang Tao Yachao Zhang Chunfu Zhang Lansheng Feng Ruoshi Peng Xiaomeng Fan Jinjuan Du Jincheng Zhang Yue Hao Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure Materials GaN p-conductivity superlattice delta doping LED |
| title | Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure |
| title_full | Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure |
| title_fullStr | Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure |
| title_full_unstemmed | Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure |
| title_short | Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure |
| title_sort | enhanced p type gan conductivity by mg delta doped algan gan superlattice structure |
| topic | GaN p-conductivity superlattice delta doping LED |
| url | https://www.mdpi.com/1996-1944/14/1/144 |
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