Comparison of interfaces, band alignments, and tunneling currents between crystalline and amorphous silica in Si/SiO2/Si structures
Recently, to improve the performance of an integrated metal-oxide-semiconductor (MOS) device, an attempt has been made in the industry to replace the amorphous oxide with a crystalline oxide. However, various characteristics caused by the difference between amorphous and crystalline oxide in the MOS...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2022-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ac639f |