Modulation of Magnetoresistance Polarity in BLG/SL-MoSe2 Heterostacks

Modulation of Magnetoresistance Polarity in BLG/SL-MoSe2 Heterostacks

Abstract Two-dimensional (2D) layered materials have an atomically thin and flat nature which makes it an ultimate candidate for spintronic devices. The spin-valve junctions (SVJs), composed of 2D materials, have been recognized as unique features of spin transport polarization. However, the magneto...

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Bibliographic Details
Main Authors: Muhammad Farooq Khan, Shania Rehman, Malik Abdul Rehman, Muhammad Abdul Basit, Deok-kee Kim, Faisal Ahmed, H. M. Waseem Khalil, Imtisal Akhtar, Seong Chan Jun
Format: Article
Language:English
Published: SpringerOpen 2020-06-01
Series:Nanoscale Research Letters
Subjects:
Graphene
MoSe2
Heterostack
Spin-valve junction
Magnetoresistance
Metals doping
Online Access:http://link.springer.com/article/10.1186/s11671-020-03365-2

Internet

http://link.springer.com/article/10.1186/s11671-020-03365-2

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