Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies

Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies

The ability to achieve highly resistive beta-phase gallium oxide (β-Ga2O3) layers and substrates is critical for β-Ga2O3 high voltage and RF devices. To date, the most common approach involves doping with iron (Fe), which generates a moderately deep acceptor-like defect state located at EC-0.8 eV in...

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Bibliographic Details
Main Authors: Hemant Ghadi, Joe F. McGlone, Evan Cornuelle, Alexander Senckowski, Shivam Sharma, Man Hoi Wong, Uttam Singisetti, Ymir Kalmann Frodason, Hartwin Peelaers, John L. Lyons, Joel B. Varley, Chris G. Van de Walle, Aaron Arehart, Steven A. Ringel
Format: Article
Language:English
Published: AIP Publishing LLC 2023-11-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0160541

Internet

http://dx.doi.org/10.1063/5.0160541

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