Refractory metal-based ohmic contacts on β-Ga2O3 using TiW
The present work investigates the use of the refractory metal alloy TiW as a possible candidate for the realization of ohmic contacts to the ultrawide bandgap semiconductor β-Ga2O3. Ohmic contact properties were analyzed by transfer length measurements of TiW contacts annealed at temperatures betwee...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-07-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0094661 |