Refractory metal-based ohmic contacts on β-Ga2O3 using TiW
The present work investigates the use of the refractory metal alloy TiW as a possible candidate for the realization of ohmic contacts to the ultrawide bandgap semiconductor β-Ga2O3. Ohmic contact properties were analyzed by transfer length measurements of TiW contacts annealed at temperatures betwee...
Main Authors: | Kornelius Tetzner, Robert Schewski, Andreas Popp, Saud Bin Anooz, Ta-Shun Chou, Ina Ostermay, Holm Kirmse, Joachim Würfl |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2022-07-01
|
Series: | APL Materials |
Online Access: | http://dx.doi.org/10.1063/5.0094661 |
Similar Items
-
Effect of post-metallization anneal on (100) Ga2O3/Ti–Au ohmic contact performance and interfacial degradation
by: Ming-Hsun Lee, et al.
Published: (2022-09-01) -
Kinetic Monte Carlo model for homoepitaxial growth of Ga_{2}O_{3}
by: Wolfram Miller, et al.
Published: (2020-07-01) -
Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices
by: Ta‐Shun Chou, et al.
Published: (2025-01-01) -
Optimization of Ohmic Contacts to p-GaAs Nanowires
by: Marcelo Rizzo Piton, et al.
Published: (2019-11-01) -
Sensing performance of β-Ga2O3 metal–semiconductor-metal deep ultraviolet photodetectors with refractory TiW electrodes at high temperatures
by: Maolin Zhang, et al.
Published: (2023-11-01)