Failure Mechanisms of Cu–Cu Bumps under Thermal Cycling
The failure mechanisms of Cu–Cu bumps under thermal cycling test (TCT) were investigated. The resistance change of Cu–Cu bumps in chip corners was less than 20% after 1000 thermal cycles. Many cracks were found at the center of the bonding interface, assumed to be a result of weak grain boundaries....
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-09-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/14/19/5522 |