Effects of Strain Channel on Electron Irradiation Tolerance of InP-based HEMT Structures
The introduction of strain InxGa1-xAs channel with high In content increases the confinement of the two-dimensional electron gas (2DEG) and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMTs. The effect of InxGa1-xAs channel with different In contents on electron irradiation...
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| Format: | Article |
| Language: | English |
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Editorial Board of Atomic Energy Science and Technology
2023-12-01
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| Series: | Yuanzineng kexue jishu |
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