Effects of Strain Channel on Electron Irradiation Tolerance of InP-based HEMT Structures
The introduction of strain InxGa1-xAs channel with high In content increases the confinement of the two-dimensional electron gas (2DEG) and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMTs. The effect of InxGa1-xAs channel with different In contents on electron irradiation...
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| Format: | Article |
| Language: | English |
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Editorial Board of Atomic Energy Science and Technology
2023-12-01
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| Series: | Yuanzineng kexue jishu |
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| _version_ | 1797345748330741760 |
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| author | FANG Renfeng1;CAO Wenyu1;WEI Yanfeng1;WANG Yin1;CHEN Chuanliang1;YAN Jiasheng2;XING Yan2;LIANG Guijie1,3;ZHOU Shuxing1,3,* |
| author_facet | FANG Renfeng1;CAO Wenyu1;WEI Yanfeng1;WANG Yin1;CHEN Chuanliang1;YAN Jiasheng2;XING Yan2;LIANG Guijie1,3;ZHOU Shuxing1,3,* |
| author_sort | FANG Renfeng1;CAO Wenyu1;WEI Yanfeng1;WANG Yin1;CHEN Chuanliang1;YAN Jiasheng2;XING Yan2;LIANG Guijie1,3;ZHOU Shuxing1,3,* |
| collection | DOAJ |
| description | The introduction of strain InxGa1-xAs channel with high In content increases the confinement of the two-dimensional electron gas (2DEG) and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMTs. The effect of InxGa1-xAs channel with different In contents on electron irradiation tolerance of InP-based HEMT structures in terms of 2DEG mobility and density has been investigated. The experiment results show that, after the same high electron irradiation dose, the 2DEG mobility and density in InP-based HEMT structures with strain InxGa1-xAs (x＞0.53) channel decrease more dramatically than that without strain In0.53Ga0.47As channel. Moreover, the degradation of 2DEG mobility and density becomes more severe as the increase of In content and strain in the InxGa1-xAs channel. The research results can provide some suggestions for the design of radiation-resistant InP-based HEMTs. |
| first_indexed | 2024-03-08T11:21:59Z |
| format | Article |
| id | doaj.art-ec1da3895a784037ac72454723b72bbc |
| institution | Directory Open Access Journal |
| issn | 1000-6931 |
| language | English |
| last_indexed | 2024-03-08T11:21:59Z |
| publishDate | 2023-12-01 |
| publisher | Editorial Board of Atomic Energy Science and Technology |
| record_format | Article |
| series | Yuanzineng kexue jishu |
| spelling | doaj.art-ec1da3895a784037ac72454723b72bbc2024-01-26T06:52:00ZengEditorial Board of Atomic Energy Science and TechnologyYuanzineng kexue jishu1000-69312023-12-0157122288229410.7538/yzk.2023.youxian.0701Effects of Strain Channel on Electron Irradiation Tolerance of InP-based HEMT StructuresFANG Renfeng1;CAO Wenyu1;WEI Yanfeng1;WANG Yin1;CHEN Chuanliang1;YAN Jiasheng2;XING Yan2;LIANG Guijie1,3;ZHOU Shuxing1,3,*01.Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, Hubei University of Arts and Science, Xiangyang 441053, China;2.Hubei Key Laboratory of High Power Semiconductor Technology, Hubei TECH Semiconductor Co., Ltd, Xiangyang 441021, China;3.Hubei Longzhong Laboratory, Xiangyang 441000, ChinaThe introduction of strain InxGa1-xAs channel with high In content increases the confinement of the two-dimensional electron gas (2DEG) and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMTs. The effect of InxGa1-xAs channel with different In contents on electron irradiation tolerance of InP-based HEMT structures in terms of 2DEG mobility and density has been investigated. The experiment results show that, after the same high electron irradiation dose, the 2DEG mobility and density in InP-based HEMT structures with strain InxGa1-xAs (x＞0.53) channel decrease more dramatically than that without strain In0.53Ga0.47As channel. Moreover, the degradation of 2DEG mobility and density becomes more severe as the increase of In content and strain in the InxGa1-xAs channel. The research results can provide some suggestions for the design of radiation-resistant InP-based HEMTs. inp-based hemtstrain channeltwo-dimensional electron gaselectron irradiation |
| spellingShingle | FANG Renfeng1;CAO Wenyu1;WEI Yanfeng1;WANG Yin1;CHEN Chuanliang1;YAN Jiasheng2;XING Yan2;LIANG Guijie1,3;ZHOU Shuxing1,3,* Effects of Strain Channel on Electron Irradiation Tolerance of InP-based HEMT Structures Yuanzineng kexue jishu inp-based hemt strain channel two-dimensional electron gas electron irradiation |
| title | Effects of Strain Channel on Electron Irradiation Tolerance of InP-based HEMT Structures |
| title_full | Effects of Strain Channel on Electron Irradiation Tolerance of InP-based HEMT Structures |
| title_fullStr | Effects of Strain Channel on Electron Irradiation Tolerance of InP-based HEMT Structures |
| title_full_unstemmed | Effects of Strain Channel on Electron Irradiation Tolerance of InP-based HEMT Structures |
| title_short | Effects of Strain Channel on Electron Irradiation Tolerance of InP-based HEMT Structures |
| title_sort | effects of strain channel on electron irradiation tolerance of inp based hemt structures |
| topic | inp-based hemt strain channel two-dimensional electron gas electron irradiation |
| work_keys_str_mv | AT fangrenfeng1caowenyu1weiyanfeng1wangyin1chenchuanliang1yanjiasheng2xingyan2liangguijie13zhoushuxing13 effectsofstrainchannelonelectronirradiationtoleranceofinpbasedhemtstructures |