Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire

Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire

Semiconductor nanowires (NWs) have a broad range of applications for nano- and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device, especially considering the piezoelectric properties of GaN. Investiga...

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Bibliographic Details
Main Authors: Sergey Lazarev, Young Yong Kim, Luca Gelisio, Zhaoxia Bi, Ali Nowzari, Ivan A. Zaluzhnyy, Ruslan Khubbutdinov, Dmitry Dzhigaev, Arno Jeromin, Thomas F. Keller, Michael Sprung, Anders Mikkelsen, Lars Samuelson, Ivan A. Vartanyants
Format: Article
Language:English
Published: MDPI AG 2021-10-01
Series:Applied Sciences
Subjects:
GaN nanowires
Bragg coherent diffraction
piezoelectric effect
finite element method
Online Access:https://www.mdpi.com/2076-3417/11/20/9419

Internet

https://www.mdpi.com/2076-3417/11/20/9419

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