Electrical Instability of CdTe:Si Crystals

<span>Results of Hall effect measurements of cadmium telluride crystals, doped by silicon (dopant concentration in the melt was 10</span><sup>18</sup><span> - 10</span><sup>19</sup><span> cm</span><sup>-3</sup><span>), all...

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Bibliographic Details
Main Authors: Ye. S. Nykoniuk, P. M. Fochuk, S. V. Solodin, M. O. Kovalets, Z. I. Zakharuk, O. E. Panchuk
Format: Article
Language:English
Published: Vasyl Stefanyk Precarpathian National University 2018-01-01
Series:Фізика і хімія твердого тіла
Online Access:http://journals.pu.if.ua/index.php/pcss/article/view/2246