Electrical Instability of CdTe:Si Crystals
<span>Results of Hall effect measurements of cadmium telluride crystals, doped by silicon (dopant concentration in the melt was 10</span><sup>18</sup><span> - 10</span><sup>19</sup><span> cm</span><sup>-3</sup><span>), all...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
Vasyl Stefanyk Precarpathian National University
2018-01-01
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Series: | Фізика і хімія твердого тіла |
Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/2246 |