A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer

A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer

In this paper, a 4H–SiC IGBT with a multifunctional P-floating layer (MP-IGBT) is proposed and investigated by Silvaco TCAD simulations. Compared with the conventional 4H–SiC field stop IGBT (FS-IGBT), the MP-IGBT structure features a P-floating layer structure under the N-buffer layer. The P-floati...

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Bibliographic Details
Main Authors: Xiaodong Zhang, Pei Shen, Zhijie Zou, Mingxin Song, Linlin Zhang
Format: Article
Language:English
Published: MDPI AG 2022-05-01
Series:Micromachines
Subjects:
4H–SiC
P-floating
snapback
turn-off loss
Online Access:https://www.mdpi.com/2072-666X/13/5/734

Internet

https://www.mdpi.com/2072-666X/13/5/734

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