Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System

Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System

Abstract To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential. However, due to the stochastic nature of filament production, this filamentary type resistive switching has...

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Bibliographic Details
Main Authors: Seyeong Yang, Taegyun Kim, Sunghun Kim, Sungjoon Kim, Tae‐Hyeon Kim, Muhammad Ismail, Chandreswar Mahata, Sungjun Kim, Seongjae Cho
Format: Article
Language:English
Published: Wiley-VCH 2023-07-01
Series:Advanced Materials Interfaces
Subjects:
neuromorphic system
resistive random‐access memory
synaptic plasticity
TiN nanocrystal
vertical resistive random‐access memory
Online Access:https://doi.org/10.1002/admi.202300290

Internet

https://doi.org/10.1002/admi.202300290

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