Modeling of 2DEG characteristics of In<sub>x</sub>Al<sub>1−x</sub>N/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect

Modeling of 2DEG characteristics of In<sub>x</sub>Al<sub>1−x</sub>N/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect

A comprehensive model for 2DEG characteristics of In<sub>x</sub>Al<sub>1&#8722;x</sub>N/AlN/GaN heterostructure has been presented, taking both polarization and bulk ionized charge into account. Investigations on the 2DEG density and electron distribution across the heter...

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Bibliographic Details
Main Authors: Jian Qin, Quanbin Zhou, Biyan Liao, Hong Wang
Format: Article
Language:English
Published: MDPI AG 2018-12-01
Series:Electronics
Subjects:
2DEG density
InAlN/GaN heterostructure
polarization effect
quantum mechanical
Online Access:https://www.mdpi.com/2079-9292/7/12/410

Internet

https://www.mdpi.com/2079-9292/7/12/410

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