Rashba effect within the space–charge layer of a semiconductor

Rashba effect within the space–charge layer of a semiconductor

The observed heavy-hole, light-hole and split-off band edges of a semiconductor are the well known consequence of two physical processes: atomic spin–orbital interaction and solid-state band–band anticrossing. In this work, we examined the four band-edge-like bands in great detail within the Ge spac...

Full description

Bibliographic Details
Main Authors: Chung-Huang Lin, Tay-Rong Chang, Ro-Ya Liu, Cheng-Maw Cheng, Ku-Ding Tsuei, H -T Jeng, Chung-Yu Mou, Iwao Matsuda, S -J Tang
Format: Article
Language:English
Published: IOP Publishing 2014-01-01
Series:New Journal of Physics
Subjects:
semiconductor band edges
space–charge layer
Rashba effect
Online Access:https://doi.org/10.1088/1367-2630/16/4/045003

Internet

https://doi.org/10.1088/1367-2630/16/4/045003

Similar Items