Silkworm Hemolymph Resistance Random Access Memory with High Stability and Low Power Consumption

Silkworm Hemolymph Resistance Random Access Memory with High Stability and Low Power Consumption

Abstract Most current resistive memory has the problems of high and unstable threshold voltages and high device misread rates caused by low current switching ratios. To address these problems, an Al/poly(methyl methacrylate) (PMMA)/silkworm hemolymph:gold nanoparticles/PMMA/indium tin oxide memory d...

Full description

Bibliographic Details
Main Authors: Lu Wang, Hongyu Zhu, Ze Zuo, Dianzhong Wen
Format: Article
Language:English
Published: Wiley-VCH 2023-04-01
Series:Advanced Electronic Materials
Subjects:
biological synapses
flexibility
low power consumption
RRAM
Online Access:https://doi.org/10.1002/aelm.202201032

Internet

https://doi.org/10.1002/aelm.202201032

Similar Items