Silkworm Hemolymph Resistance Random Access Memory with High Stability and Low Power Consumption
Abstract Most current resistive memory has the problems of high and unstable threshold voltages and high device misread rates caused by low current switching ratios. To address these problems, an Al/poly(methyl methacrylate) (PMMA)/silkworm hemolymph:gold nanoparticles/PMMA/indium tin oxide memory d...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-04-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202201032 |
| _version_ | 1827893417053519872 |
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| author | Lu Wang Hongyu Zhu Ze Zuo Dianzhong Wen |
| author_facet | Lu Wang Hongyu Zhu Ze Zuo Dianzhong Wen |
| author_sort | Lu Wang |
| collection | DOAJ |
| description | Abstract Most current resistive memory has the problems of high and unstable threshold voltages and high device misread rates caused by low current switching ratios. To address these problems, an Al/poly(methyl methacrylate) (PMMA)/silkworm hemolymph:gold nanoparticles/PMMA/indium tin oxide memory device is fabricated by adding PMMA layers above and below the active layer. The device not only has stable bipolar switching characteristics with a high ON/OFF current ratio but also has a lower and more stable threshold voltage. Potentiation, depression, and spike‐time‐dependent plasticity at biological synapses are realized using this device. The device is successfully fabricated on a flexible substrate, and the device can still maintain a stable working state after 104 bending cycles. This research opens a new door for the future realization of artificial synapses in neural network hardware. |
| first_indexed | 2024-03-12T21:53:39Z |
| format | Article |
| id | doaj.art-ed20a9eba4c74bcc8f486c1653cf7af1 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-12T21:53:39Z |
| publishDate | 2023-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-ed20a9eba4c74bcc8f486c1653cf7af12023-07-26T01:35:24ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-04-0194n/an/a10.1002/aelm.202201032Silkworm Hemolymph Resistance Random Access Memory with High Stability and Low Power ConsumptionLu Wang0Hongyu Zhu1Ze Zuo2Dianzhong Wen3School of Electronic Engineering Heilongjiang University Harbin 150080 P. R. ChinaSchool of Electronic Engineering Heilongjiang University Harbin 150080 P. R. ChinaSchool of Electronic Engineering Heilongjiang University Harbin 150080 P. R. ChinaSchool of Electronic Engineering Heilongjiang University Harbin 150080 P. R. ChinaAbstract Most current resistive memory has the problems of high and unstable threshold voltages and high device misread rates caused by low current switching ratios. To address these problems, an Al/poly(methyl methacrylate) (PMMA)/silkworm hemolymph:gold nanoparticles/PMMA/indium tin oxide memory device is fabricated by adding PMMA layers above and below the active layer. The device not only has stable bipolar switching characteristics with a high ON/OFF current ratio but also has a lower and more stable threshold voltage. Potentiation, depression, and spike‐time‐dependent plasticity at biological synapses are realized using this device. The device is successfully fabricated on a flexible substrate, and the device can still maintain a stable working state after 104 bending cycles. This research opens a new door for the future realization of artificial synapses in neural network hardware.https://doi.org/10.1002/aelm.202201032biological synapsesflexibilitylow power consumptionRRAM |
| spellingShingle | Lu Wang Hongyu Zhu Ze Zuo Dianzhong Wen Silkworm Hemolymph Resistance Random Access Memory with High Stability and Low Power Consumption Advanced Electronic Materials biological synapses flexibility low power consumption RRAM |
| title | Silkworm Hemolymph Resistance Random Access Memory with High Stability and Low Power Consumption |
| title_full | Silkworm Hemolymph Resistance Random Access Memory with High Stability and Low Power Consumption |
| title_fullStr | Silkworm Hemolymph Resistance Random Access Memory with High Stability and Low Power Consumption |
| title_full_unstemmed | Silkworm Hemolymph Resistance Random Access Memory with High Stability and Low Power Consumption |
| title_short | Silkworm Hemolymph Resistance Random Access Memory with High Stability and Low Power Consumption |
| title_sort | silkworm hemolymph resistance random access memory with high stability and low power consumption |
| topic | biological synapses flexibility low power consumption RRAM |
| url | https://doi.org/10.1002/aelm.202201032 |
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