Silkworm Hemolymph Resistance Random Access Memory with High Stability and Low Power Consumption
Abstract Most current resistive memory has the problems of high and unstable threshold voltages and high device misread rates caused by low current switching ratios. To address these problems, an Al/poly(methyl methacrylate) (PMMA)/silkworm hemolymph:gold nanoparticles/PMMA/indium tin oxide memory d...
| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | English |
| Publicado em: |
Wiley-VCH
2023-04-01
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| coleção: | Advanced Electronic Materials |
| Assuntos: | |
| Acesso em linha: | https://doi.org/10.1002/aelm.202201032 |