Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure

Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure

The effect of 3 MeV proton irradiation on interface traps under a Schottky contact in an AlGaN/GaN heterostructure has been investigated in this work. Utilizing the frequency-dependent conductance technique, the detailed information about interface traps under different proton doses has been evaluat...

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Bibliographic Details
Main Authors: Xue-Feng Zheng, Guan-Jun Chen, Xiao-Hu Wang, Ying-Zhe Wang, Chong Wang, Wei Mao, Yang Lu, Bin Hou, Min-Han Mi, Ling Lv, Yan-Rong Cao, Qing Zhu, Gang Guo, Pei-Jun Ma, Xiao-Hua Ma, Yue Hao
Format: Article
Language:English
Published: AIP Publishing LLC 2020-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0007650

Internet

http://dx.doi.org/10.1063/5.0007650

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