Subthreshold-swing physics of tunnel field-effect transistors
Band-to-band tunnel field-effect-transistors (TFETs) are considered a possible replacement for the conventional metal-oxide-semiconductor field-effect transistors due to their ability to achieve subthreshold swing (SS) below 60 mV/decade. This letter reports a comprehensive study of the SS of TFETs...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4881979 |