Design Considerations for Sub-1-V 1T1C FeRAM Memory Circuits

Design Considerations for Sub-1-V 1T1C FeRAM Memory Circuits

We present a comprehensive benchmarking framework for one transistor-one capacitor (1T1C) low-voltage ferroelectric random access memory (FeRAM) circuits. We focus on the most promising ferroelectric materials, hafnium zirconium oxide (HZO) and barium titanate (BTO), known for their fast switching s...

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Bibliographic Details
Main Authors: Mohammad Adnaan, Sou-Chi Chang, Hai Li, Yu-Ching Liao, Ian A. Young, Azad Naeemi
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Subjects:
Ferroelectric memory
ferroelectric random access memory (FeRAM)
hysteresis
memory circuit benchmarking
phase-field model
Online Access:https://ieeexplore.ieee.org/document/10738514/

Internet

https://ieeexplore.ieee.org/document/10738514/

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