Modelling and performance analysis of amorphous silicon solar cell using wide band gap nc‐Si:H window layer
Poor charge transport mechanism and light‐induced degradation effects are among the key factors leading to the degraded performance of single‐junction amorphous silicon (a‐Si:H) solar cells. Existent photovoltaic configurations, based on amorphous silicon carbide (a‐SiC:H) window layer, have establi...
Main Authors: | , |
---|---|
Format: | Article |
Language: | English |
Published: |
Hindawi-IET
2017-11-01
|
Series: | IET Circuits, Devices and Systems |
Subjects: | |
Online Access: | https://doi.org/10.1049/iet-cds.2017.0072 |