A 4-mW Temperature-Stable 28 GHz LNA with Resistive Bias Circuit for 5G Applications
This paper presents a low power two-stage single-end (SE) 28 GHz low-noise amplifier (LNA) in 90 nm silicon-on-insulator (SOI) CMOS technology for 5G applications. In this design, the influence of bias circuit is discussed. The 1200 Ω resistor which was adopted in bias circuit can feed DC voltage as...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-07-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/9/8/1225 |