A 4-mW Temperature-Stable 28 GHz LNA with Resistive Bias Circuit for 5G Applications
This paper presents a low power two-stage single-end (SE) 28 GHz low-noise amplifier (LNA) in 90 nm silicon-on-insulator (SOI) CMOS technology for 5G applications. In this design, the influence of bias circuit is discussed. The 1200 Ω resistor which was adopted in bias circuit can feed DC voltage as...
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MDPI AG
2020-07-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/9/8/1225 |
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| author | Dongze Li Qingzhen Xia Jiawei Huang Jinwei Li Hudong Chang Bing Sun Honggang Liu |
| author_facet | Dongze Li Qingzhen Xia Jiawei Huang Jinwei Li Hudong Chang Bing Sun Honggang Liu |
| author_sort | Dongze Li |
| collection | DOAJ |
| description | This paper presents a low power two-stage single-end (SE) 28 GHz low-noise amplifier (LNA) in 90 nm silicon-on-insulator (SOI) CMOS technology for 5G applications. In this design, the influence of bias circuit is discussed. The 1200 Ω resistor which was adopted in bias circuit can feed DC voltage as well as keep whole circuit unconditionally stable. The gate bias points are set to 0.55 V to make the circuit low-power and temperature-stable. Measurement results illustrated that the LNA achieved a maximum small signal gain of 18.1 dB and an average 3.1 dB noise figure (NF) in operating frequency band. Measured S11 was below −10 dB between 25 GHz and 29 GHz and reverse isolation S12 was below −25 dB throughout the band. It consumed only 4 mW by proper selection of bias point with core area of 0.16 mm<sup>2</sup> without pads. The fabricated LNA has demonstrated a gain variation of 3 dB and a NF variation of 1.9 dB from −40 °C to 125 °C with power variation of 0.8 mW. It suggests that the proposed SOI CMOS LNA can be a promising candidate for 5G applications. |
| first_indexed | 2024-03-10T18:06:41Z |
| format | Article |
| id | doaj.art-ed441f0fb6c3488782c137d823de68ab |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T18:06:41Z |
| publishDate | 2020-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-ed441f0fb6c3488782c137d823de68ab2023-11-20T08:28:30ZengMDPI AGElectronics2079-92922020-07-0198122510.3390/electronics9081225A 4-mW Temperature-Stable 28 GHz LNA with Resistive Bias Circuit for 5G ApplicationsDongze Li0Qingzhen Xia1Jiawei Huang2Jinwei Li3Hudong Chang4Bing Sun5Honggang Liu6High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaHigh-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaThis paper presents a low power two-stage single-end (SE) 28 GHz low-noise amplifier (LNA) in 90 nm silicon-on-insulator (SOI) CMOS technology for 5G applications. In this design, the influence of bias circuit is discussed. The 1200 Ω resistor which was adopted in bias circuit can feed DC voltage as well as keep whole circuit unconditionally stable. The gate bias points are set to 0.55 V to make the circuit low-power and temperature-stable. Measurement results illustrated that the LNA achieved a maximum small signal gain of 18.1 dB and an average 3.1 dB noise figure (NF) in operating frequency band. Measured S11 was below −10 dB between 25 GHz and 29 GHz and reverse isolation S12 was below −25 dB throughout the band. It consumed only 4 mW by proper selection of bias point with core area of 0.16 mm<sup>2</sup> without pads. The fabricated LNA has demonstrated a gain variation of 3 dB and a NF variation of 1.9 dB from −40 °C to 125 °C with power variation of 0.8 mW. It suggests that the proposed SOI CMOS LNA can be a promising candidate for 5G applications.https://www.mdpi.com/2079-9292/9/8/1225low-noise amplifierbias circuitneutralizedSOI5Gtemperature-stable |
| spellingShingle | Dongze Li Qingzhen Xia Jiawei Huang Jinwei Li Hudong Chang Bing Sun Honggang Liu A 4-mW Temperature-Stable 28 GHz LNA with Resistive Bias Circuit for 5G Applications Electronics low-noise amplifier bias circuit neutralized SOI 5G temperature-stable |
| title | A 4-mW Temperature-Stable 28 GHz LNA with Resistive Bias Circuit for 5G Applications |
| title_full | A 4-mW Temperature-Stable 28 GHz LNA with Resistive Bias Circuit for 5G Applications |
| title_fullStr | A 4-mW Temperature-Stable 28 GHz LNA with Resistive Bias Circuit for 5G Applications |
| title_full_unstemmed | A 4-mW Temperature-Stable 28 GHz LNA with Resistive Bias Circuit for 5G Applications |
| title_short | A 4-mW Temperature-Stable 28 GHz LNA with Resistive Bias Circuit for 5G Applications |
| title_sort | 4 mw temperature stable 28 ghz lna with resistive bias circuit for 5g applications |
| topic | low-noise amplifier bias circuit neutralized SOI 5G temperature-stable |
| url | https://www.mdpi.com/2079-9292/9/8/1225 |
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