Enhanced terahertz radiation of photoconductive antenna fabricated on GaAs-on-sapphire
The terahertz (THz) radiation properties of a photoconductive antenna (PCA) fabricated on a GaAs-on-sapphire (GoS) substrate are reported at sub-THz band. The GaAs layer with a thickness of approximately 1 µm was directly deposited on a sapphire wafer by means of molecular beam epitaxy. A butterfly-...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-12-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5127877 |