Enhanced terahertz radiation of photoconductive antenna fabricated on GaAs-on-sapphire
The terahertz (THz) radiation properties of a photoconductive antenna (PCA) fabricated on a GaAs-on-sapphire (GoS) substrate are reported at sub-THz band. The GaAs layer with a thickness of approximately 1 µm was directly deposited on a sapphire wafer by means of molecular beam epitaxy. A butterfly-...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2019-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5127877 |
| _version_ | 1819074033509990400 |
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| author | Jitao Zhang Mingguang Tuo Michael Gehl Ricky Gibson Min Liang Hao Xin |
| author_facet | Jitao Zhang Mingguang Tuo Michael Gehl Ricky Gibson Min Liang Hao Xin |
| author_sort | Jitao Zhang |
| collection | DOAJ |
| description | The terahertz (THz) radiation properties of a photoconductive antenna (PCA) fabricated on a GaAs-on-sapphire (GoS) substrate are reported at sub-THz band. The GaAs layer with a thickness of approximately 1 µm was directly deposited on a sapphire wafer by means of molecular beam epitaxy. A butterfly-shaped antenna structure was then fabricated on the GoS substrate by photolithography, and the device was tested as the emitter of an in-house built THz time-domain spectrometer. The performance of this antenna was compared with a commercial one, which had an identical antenna structure but was fabricated on low-temperature-grown GaAs (LT-GaAs). The results showed that the GoS-based PCA radiated an enhanced THz field, which could be as much as 1.9 times that of the LT-GaAs-based PCA, indicating that GoS could be a promising photoconductive material. In addition, the optical transparency of the sapphire substrate allows the device to be illuminated from the backside, which is crucial for THz near-field imaging applications where the sample is usually in close proximity to the front surface of the PCA device. |
| first_indexed | 2024-12-21T18:03:05Z |
| format | Article |
| id | doaj.art-ed45f3997d2b4b5990afad028873bba9 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-21T18:03:05Z |
| publishDate | 2019-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-ed45f3997d2b4b5990afad028873bba92022-12-21T18:55:01ZengAIP Publishing LLCAIP Advances2158-32262019-12-01912125234125234-410.1063/1.5127877Enhanced terahertz radiation of photoconductive antenna fabricated on GaAs-on-sapphireJitao Zhang0Mingguang Tuo1Michael Gehl2Ricky Gibson3Min Liang4Hao Xin5Department of Electrical and Computer Engineering, The University of Arizona, Tucson, Arizona 85721, USADepartment of Electrical and Computer Engineering, The University of Arizona, Tucson, Arizona 85721, USAPhotonic and Phononic Microsystems, Sandia National Laboratory, Albuquerque, New Mexico 87123, USAWyant College of Optical Sciences, The University of Arizona, Tucson, Arizona 85721, USADepartment of Electrical and Computer Engineering, The University of Arizona, Tucson, Arizona 85721, USADepartment of Electrical and Computer Engineering, The University of Arizona, Tucson, Arizona 85721, USAThe terahertz (THz) radiation properties of a photoconductive antenna (PCA) fabricated on a GaAs-on-sapphire (GoS) substrate are reported at sub-THz band. The GaAs layer with a thickness of approximately 1 µm was directly deposited on a sapphire wafer by means of molecular beam epitaxy. A butterfly-shaped antenna structure was then fabricated on the GoS substrate by photolithography, and the device was tested as the emitter of an in-house built THz time-domain spectrometer. The performance of this antenna was compared with a commercial one, which had an identical antenna structure but was fabricated on low-temperature-grown GaAs (LT-GaAs). The results showed that the GoS-based PCA radiated an enhanced THz field, which could be as much as 1.9 times that of the LT-GaAs-based PCA, indicating that GoS could be a promising photoconductive material. In addition, the optical transparency of the sapphire substrate allows the device to be illuminated from the backside, which is crucial for THz near-field imaging applications where the sample is usually in close proximity to the front surface of the PCA device.http://dx.doi.org/10.1063/1.5127877 |
| spellingShingle | Jitao Zhang Mingguang Tuo Michael Gehl Ricky Gibson Min Liang Hao Xin Enhanced terahertz radiation of photoconductive antenna fabricated on GaAs-on-sapphire AIP Advances |
| title | Enhanced terahertz radiation of photoconductive antenna fabricated on GaAs-on-sapphire |
| title_full | Enhanced terahertz radiation of photoconductive antenna fabricated on GaAs-on-sapphire |
| title_fullStr | Enhanced terahertz radiation of photoconductive antenna fabricated on GaAs-on-sapphire |
| title_full_unstemmed | Enhanced terahertz radiation of photoconductive antenna fabricated on GaAs-on-sapphire |
| title_short | Enhanced terahertz radiation of photoconductive antenna fabricated on GaAs-on-sapphire |
| title_sort | enhanced terahertz radiation of photoconductive antenna fabricated on gaas on sapphire |
| url | http://dx.doi.org/10.1063/1.5127877 |
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