Separation of current density and electric field domains caused by nonlinear electronic instabilities
The usefulness of metal-oxide memristors for memory and brain-inspired computing applications arises from their electronic instabilities, whose details remain limited. In this work, the authors analyze electronic decompositions in several metal oxides, providing new insights for device modeling.
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2018-05-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-018-04452-w |