Heterojunction bipolar transistors with a planar‐type extended base as a hydrogen‐sensitive sensor
Abstract A hydrogen sensing transistor fabricated by a heterojunction bipolar transistor (HBT) with an extended base (EB) formed by a metal–semiconductor–metal (MSM) hydrogen sensor is reported. The power consumption in stand‐by mode is smaller than 2 µW. Common‐emitter characteristics show that the...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2022-10-01
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| Series: | Electronics Letters |
| Online Access: | https://doi.org/10.1049/ell2.12614 |