Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency
VSe2 is with high electrical conductivity and high work function, thus it is beneficial for the carrier transport in the optoelectronic devices. However, the performance and mechanism of its effect on the photoelectronic devices conversion efficiency is still beyond understood. In this work, we fabr...
Auteurs principaux: | Yu Zeng, Zhan Shen, Xu Wu, Dong-Xiao Wang, Ye-Liang Wang, Ya-Li Sun, Li Wu, Yi Zhang |
---|---|
Format: | Article |
Langue: | English |
Publié: |
Elsevier
2021-05-01
|
Collection: | Journal of Materiomics |
Sujets: | |
Accès en ligne: | http://www.sciencedirect.com/science/article/pii/S2352847820305165 |
Documents similaires
-
Formation of Monolayer Charge Density Waves and Anomalous Edge Doping in Na Doped Bulk VSe2
par: Ulysse Chazarin, et autres
Publié: (2023-01-01) -
Interlayer excitons in transition metal dichalcogenide semiconductors for 2D optoelectronics
par: Liu, Yuanda, et autres
Publié: (2022) -
Optoelectronic Devices Based on Atomically Thin Transition Metal Dichalcogenides
par: Andreas Pospischil, et autres
Publié: (2016-03-01) -
Optoelectronics with single layer group-VIB transition metal dichalcogenides
par: Khan M.A., et autres
Publié: (2018-09-01) -
Optoelectronic and photonic devices based on transition metal dichalcogenides
par: Kartikey Thakar, et autres
Publié: (2020-01-01)